digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 GA300, GA300a, ga301, ga301a silicon controlled rectifier nanosecond switching planar available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum rankings GA300 GA300a ga301 ga301a repetitive peak off state voltage v drm 60v 100v repetitive peak on-state current i trm up to 100a peak gate current i gm 250 ma average gate current i g(av) 25 ma reverse gate current i gr 3 ma reverse gate voltage v gr 5 v storage temperature range -65 to +150c operating temperature range 0 to +125c electrical characteristics (@ 25c unless otherwise noted) test symbol min typical max units conditions delay time t d - 20 10 30 - ns i g = 20 ma, i t = 1 a i g = 30 ma, i t = 1a rise time (note 1) GA300, GA300a t r - 15 25 25 - ns v d = 60 v, i t = 1 a v d = 60 v, i t = 30 a (note 1) rise time (note 1) ga301, ga301a t r - 10 20 20 - ns v d = 100 v, i t = 1a v d = 100 v, i t = 30 a (note 1) circuit commutated turn off time GA300, ga301 0.8 2.0 GA300a, ga301a t q - 0.3 0.5 s i t = 1 a, i r = 1 a, r gk = 1k gate trigger on pulse width t pg(on) - 0.02 0.05 s i g = 10 ma, i t = 1 a off-state current i drm - - 0.01 20 0.1 100 a v drm = rating, r gk = 1k, t = 25c v drm = rating, r gk = 1k, t = 125c reverse current (note 2) i rrm - 1.0 10 ma v rrm = 30 v, r gk = 1 k (note 2) gate trigger voltage v gt 0.4 0.10 0.6 0.2 0.75 - v v d = 5v, r gs = 100 ? , t = 25c v d = 5 v, r gs = 100 ? , t = 125c gate trigger current i gt - 10 200 a v d = 5 v, r gs = 10 k on-state voltage v t - 1.1 1.5 v i t = 2 a off-state voltage ? critical rate of rise dv/dt 15 30 - v/s v d = 30 v, r gk = 1 k reverse gate current i gr - 0.01 0.1 ma v gr = 5 v holding current i h 0.3 0.05 2.0 0.4 5.0 - ma v d = 5v, r gk = 1 k, t = 25c v d = 5 v, r gk = 1 k, t = 125c note 1 ? i g = 10 ma, pulse test: duty cycle < 1%. note 2 ? pulse test intended to guarantee reverse anode voltage capability for pulse commutation. device should not be operate d in the reverse blocking mode on a continuous basis. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 GA300, GA300a, ga301, ga301a silicon controlled rectifier nanosecond switching planar mechanical characteristics GA300(a), ga301(a) case to-18 marking alpha-numeric pin out see below to-18 inches millimeters min max min max a 0.209 0.230 5.310 5.840 b 0.178 0.195 4.520 4.950 c 0.170 0.210 4.320 5.330 d 0.016 0.021 0.406 0.533 e - 0.030 - 0.762 f 0.016 0.019 0.406 0.483 g 0.100 bsc 2.540 bsc h 0.036 0.046 0.914 1.170 j 0.028 0.048 0.711 1.220 k 0.500 - 12.700 - l 0.250 - 6.350 - m 45c bsc 45 bsc n 0.050 bsc 1.270 bsc p - 0.050 - 1.270 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 GA300, GA300a, ga301, ga301a silicon controlled rectifier gb300, gb300a, gb301, gb301a nanosecond switching planar sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
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